
SQ1421EEH
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.005
10
Vishay Siliconix
10 -1
0.004
10 -2
10 -3
0.003
0.002
0.001
T J = 25 °C
10 -4
10 -5
10 -6
10 -7
10 -8
10 -9
T J = 150 °C
T J = 25 °C
0.000
0
5
10
15
20
25
10 -10
0
5
10
15
20
25
10
8
V GS - G ate- S ource Voltage (V)
Gate Current vs. Gate-Source Voltage
V GS = 10 V thru 6 V
V GS = 5 V
8
6
V GS - G ate- S ource Voltage (V)
Gate Current vs. Gate-Source Voltage
6
4
4
2
V GS = 4 V
2
T C = 25 ° C
0
0
2
V GS = 3 V
4
6
8
10
0
0
T C = 125 ° C
2
4
T C = - 55 ° C
6
8
10
5
V D S - Drain-to- S ource Voltage (V)
Output Characteristics
1.0
V GS - G ate-to- S ource Voltage (V)
Transfer Characteristics
4
3
2
T C = 25 ° C
T C = - 55 ° C
T C = 125 ° C
0.8
0.6
0.4
V GS = 4.5 V
1
0.2
V GS = 10 V
0
0.0
0.4
0.8
1.2
1.6
2.0
0.0
0
2
4
6
8
10
I D - Drain Current (A)
Transconductance
I D - Drain Current (A)
On-Resistance vs. Drain Current
S11-2128 Rev. B, 31-Oct-11
3
Document Number: 67057
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